2sb1302 no.2555-1/4 applications dc-dc converters, motor drivers, relay drivers, lamp drivers. features adoption of fbet, mbit processes. low collector-to-emitter saturation voltage. large current capacity. fast switching speed. ultrasmall size making it easy to provide high-density, small-sized hybrid ic s. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo --25 v collector-to-emitter voltage v ceo --20 v emitter-to-base voltage v ebo -- 5 v collector current i c -- 5 a collector current (pulse) i cp -- 8 a collector dissipation p c mounted on a ceramic board (250mm 2 ? 0.8mm) 1.3 w junction temperature tj 150 c storage temperature tstg --55 to +150 c marking : bj www.semiconductor-sanyo.com/network ordering number : en2555b 31710ea tk im / 10904tn (kt)/o1598ha (kt)/d2680mo/4097ta, ts specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. sanyo semiconductors data sheet 2sb1302 pnp epitaxial planar silicon transistor high-current switching applications http://semicon.sanyo.com/en/network
2sb1302 no.2555-2/4 electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =--20v, i e =0a --500 na emitter cutoff current i ebo v eb =--4v, i c =0a --500 na dc current gain h fe 1v ce =--2v, i c =--500ma 100* 400* h fe 2v ce =--2v, i c =--4a 60 gain-bandwidth product f t v ce =--5v, i c =--200ma 320 mhz output capacitance cob v cb =--10v, f=1mhz 60 pf collector-to-emitter saturation voltage v ce (sat) i c =--3a, i b =--60ma --250 --500 mv base-to-emitterr saturation voltage v be (sat) i c =--3a, i b =--60ma --1.0 --1.3 v collector-to-base breakdown voltage v (br)cbo i c =--10
2sb1302 no.2555-3/4 i c -- v ce collector current, i c -- a collector-to-emitter voltage, v ce -- v i c -- v ce collector current, i c -- a collector-to-emitter voltage, v ce -- v v ce (sat) -- i c collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- a h fe -- i c collector current, i c -- a dc current gain, h fe f t -- i c collector current, i c -- a gain-brandwidth product, f t -- mhz cob -- v cb collector-to-base voltage, v cb -- v output capacitance, cob -- pf v be (sat) -- i c collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v itr09569 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 0 -- 4 -- 5 -- 3 -- 2 -- 1 -- 6 v ce = -- 2v v ce = -- 2v itr09567 0 --0.4 --0.2 --0.8 --0.6 --1.0 0 -- 1 -- 2 -- 3 -- 4 -- 5 i b =0 ma -- 40ma -- 30ma -- 20ma -- 10ma itr09568 itr09570 --0.1 --0.01 3 23 5 --1.0 --10 57 7 7 7235 2 100 1000 5 3 2 5 3 2 7 7 ta=75 c 25 c --25 c -- 50ma 0--2 -- 1 -- 4 -- 3 -- 5 0 -- 1 -- 2 -- 3 -- 4 -- 5 i b =0 ma -- 40ma -- 30ma -- 25ma -- 15ma -- 35ma -- 20ma -- 10ma -- 5ma ta=75 c 25 c --25 c from top -- 100ma -- 90ma -- 80ma -- 70ma -- 60ma itr09573 5 --0.1 2 --0.01 23 357 7 77 --1.0 23 5 --10 --10 5 7 --100 7 --1000 5 3 2 3 2 itr09574 5 5 --1.0 2 --0.1 --0.01 23 23 57 7 7 7 --10 3 --1.0 5 7 7 3 --10 5 3 2 i c / i b =50 -- 0.1 23 -- 0.01 23 3 57 57 7 -- 1.0 7 -- 10 5 2 7 100 5 2 3 7 1000 5 3 itr09571 7 -- 10 23 -- 1.0 23 35 7 5 10 7 100 5 3 3 2 2 itr09572 v ce = -- 5v f=1mhz ta= --25 c 25 c 75 c i c / i b =50 ta= --25 c 25 c 75 c
2sb1302 no.2555-4/4 sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party?s intellectual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. ps this catalog provides information as of march, 2010. specifications and information herein are subject to change without notice. p c -- ta a s o collector-to-emitter voltage, v ce -- v collector current, i c -- a ambient temperature, ta -- c collector dissipation, p c -- w itr09575 10ms 1ms -- 1 . 0 3 5 5 5 7 7 7 2 2 3 2 2 3 5 2 3 5 3 77 -- 1 0 -- 1 . 0 2 -- 1 0 -- 0 . 1 dc operation 100ms ta=25 c single pulse 0 20 40 60 80 100 120 140 160 0 0.2 0.4 0.6 0.8 1.2 1.4 1.8 1.0 itr09576 mounted on a ceramic board (250mm 2 0.8mm) i cp = --8a i c = --5a mounted on a ceramic board (250mm 2 0.8mm)
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